The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Jan. 27, 2015
Brocere Electronics Company Limited, New Taipei, TW;
Brocere Electronics company limited, New Taipei, TW;
Abstract
A resistive random access memory device includes: a first control line, a second control line, a RRAM cell, a first programmable current source and a first programmable voltage source. The RRAM cell is coupled between the first control line and the second control line, and has a programmable resistive element. The first programmable current source is coupled to the first control line, and for selectively providing a configuration current to the RRAM cell. The first programmable voltage source is coupled to the first control line, and for selectively providing a configuration voltage to the RRAM cell. Additionally, a state of the programmable resistive element of the RRAM cell is configured according to the configuration current and the configuration voltage. Under architecture of the RRAM cell of the present invention, a reading circuit for the RRAM device can be implemented with a simple inverter instead of a complicated current sensing amplifier.