The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Apr. 23, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Kiho Yang, Gyeonggi-do, KR;
Kaiyuan Chi, Gyeonggi-do, KR;
Seunghune Yang, Seoul, KR;
Sibo Cai, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A pattern analysis method of a semiconductor device includes extracting a contour image of material layer patterns formed on a wafer, calculating an individual density value (DV) representing an area difference between the contour image and a target layout image, scoring the material layer patterns on the wafer using the individual DV, identifying a failure pattern among the scored material layer patterns, calculating coordinates of the identified failure pattern and displaying the coordinates on a critical dimension-scanning electron microscopy (CD-SEM) image, inputting a reference DV in the computer and automatically sorting the material layer patterns into material layer patterns having a hotspot and material layer patterns not having a hotspot, and reviewing the sorted material layer patterns having the hotspot.