The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Dec. 24, 2013
National University Corporation Nagoya University, Nagoya-shi, Aichi, JP;
Toru Ujihara, Nagoya, JP;
Fumiaki Ichihashi, Nagoya, JP;
Daiki Shimura, Nagoya, JP;
Makoto Kuwahara, Nagoya, JP;
Shunta Harada, Nagoya, JP;
NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY, Nagoya, JP;
Abstract
A technique of measuring energy of electrons excited by exposing a semiconductor material to solar ray is proposed. A surface layer having a negative electron affinity is formed on the surface of a semiconductor material. The semiconductor material is placed in a vacuum environment and exposed to solar ray. Photoelectrons emitted from the surface layer having the negative electron affinity are guided to an energy analyzer, and the energy of electrons excited by the solar ray is measured. Since the surface layer having the negative electron affinity is used, the photoelectrons are obtained from the electrons excited by the solar ray, and thereby energy measurement becomes possible.