The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2017

Filed:

Sep. 09, 2013
Applicant:

Omron Corporation, Kyoto-shi, Kyoto, JP;

Inventor:

Yuki Uchida, Kyoto, JP;

Assignee:

OMRON Corporation, Kyoto-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04R 19/04 (2006.01); H04R 1/24 (2006.01); H04R 3/06 (2006.01); H04R 19/00 (2006.01); H04R 3/00 (2006.01); H04R 1/04 (2006.01); B81B 3/00 (2006.01); G10K 11/00 (2006.01); H04R 7/06 (2006.01);
U.S. Cl.
CPC ...
H04R 19/04 (2013.01); B81B 3/00 (2013.01); G10K 11/002 (2013.01); H04R 1/245 (2013.01); H04R 3/002 (2013.01); H04R 3/06 (2013.01); H04R 7/06 (2013.01); H04R 19/005 (2013.01); H04R 1/04 (2013.01); H04R 3/005 (2013.01); H04R 2201/003 (2013.01); H04R 2410/03 (2013.01); H04R 2499/11 (2013.01);
Abstract

A chamber that penetrates vertically is formed in a silicon substrate. A diaphragm is arranged on the upper surface of the silicon substrate so as to cover the upper opening of the chamber. The diaphragm is divided by slits into a region located above the chamber (first diaphragm) and a region located above the upper surface of the silicon substrate (second diaphragm). A fixed electrode plate is arranged above the first diaphragm, and a low-volume first acoustic sensing portion is formed by the first diaphragm and the fixed electrode plate. Also, a high-volume second acoustic sensing portion is formed by the second diaphragm and the upper surface (electrically conducting layer) of the silicon substrate.


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