The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2017

Filed:

Sep. 24, 2015
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Postech Academy-industry Foundation, Pohang-si, KR;

Inventors:

Jaesup Lee, Yongin-si, KR;

Tae-Young Chung, Pohang-si, KR;

Bum-Man Kim, Pohang-si, KR;

Dae-Chul Jeong, Pohang-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 5/131 (2014.01); H03K 17/284 (2006.01); H03K 17/292 (2006.01); H03K 5/00 (2006.01);
U.S. Cl.
CPC ...
H03K 17/292 (2013.01); H03K 5/131 (2013.01); H03K 17/284 (2013.01); H03K 2005/00019 (2013.01); H03K 2005/00195 (2013.01);
Abstract

A leakage current-based delay circuit is provided, wherein the delay circuit may include a first transistor circuit and a second transistor circuit, each transistor circuit may include a p-type transistor, an n-type transistor, an n-node between a drain node of the p-type transistor and a gate node of the n-type transistor, and a p-node between a gate node of the p-type transistor and a drain node of the n-type transistor. The p-node of the second transistor circuit may be charged based on a power source voltage through the first transistor circuit during a first time interval of an input signal, and the n-node of the second transistor circuit may be discharged based on a ground voltage through the first transistor circuit during the first time interval.


Find Patent Forward Citations

Loading…