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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9667147 B1

PDFFull Text
Expired
Date of Patent:
May. 30, 2017

Filed:

Mar. 09, 2016

Semiconductor device with dc/dc converter circuit

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Ryohei Nega, Tokyo, JP;

Yoshinao Miura, Tokyo, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

Shapiro, Gabor and Rosenberger, PLLC

Primary Examiner:

Thanh V Pham

Int. Cl.
CPC ...
H01L 23/495 (2006.01); H02M 3/158 (2006.01); H01L 29/778 (2006.01); H01L 27/088 (2006.01); H02M 1/34 (2007.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 21/8252 (2006.01); H01L 27/06 (2006.01); H01L 29/205 (2006.01); H01L 29/20 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H02M 3/158 (2013.01); H01L 21/8252 (2013.01); H01L 23/49562 (2013.01); H01L 23/49844 (2013.01); H01L 27/0605 (2013.01); H01L 27/088 (2013.01); H01L 27/0883 (2013.01); H01L 29/205 (2013.01); H01L 29/41758 (2013.01); H01L 29/42364 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H02M 1/34 (2013.01); H01L 23/49575 (2013.01); H01L 23/49861 (2013.01); H01L 29/2003 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/49111 (2013.01);
Abstract

Provided is a semiconductor device including: a DC/DC converter circuit, wherein the DC/DC converter circuit includes a transistor of a normally-off type, having a first drain electrode connected town input terminal and a first source electrode connected to an output terminal, which is formed in a first compound semiconductor substrate having a two-dimensional electron gas layer, and a transistor having a second drain electrode connected to the first source electrode and a grounded second source electrode.

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Nega, Ryohei. (2017). Semiconductor device with dc/dc converter circuit (U.S. Patent No. 9667147). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9667147

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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