The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2017

Filed:

Nov. 13, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ning Li, White Plains, NY (US);

Ke Liu, Arlington, VA (US);

Devendra K. Sadana, Pleasantville, NY (US);

Volker J. Sorger, Alexandria, VA (US);

Assignees:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); G02B 6/10 (2006.01); G02B 6/26 (2006.01); H01S 5/00 (2006.01); H01L 21/00 (2006.01); H01S 5/042 (2006.01); H01S 5/10 (2006.01); H01S 5/343 (2006.01); H01S 5/026 (2006.01); G02B 6/136 (2006.01); G02B 6/43 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0425 (2013.01); G02B 6/12002 (2013.01); G02B 6/136 (2013.01); G02B 6/43 (2013.01); H01S 5/026 (2013.01); H01S 5/1042 (2013.01); H01S 5/1046 (2013.01); H01S 5/34346 (2013.01);
Abstract

A plasmonic light source includes a substrate and a square nano-cavity formed on the substrate. The nano-cavity includes a quantum well structure. The quantum well structure includes III-V materials. A plasmonic metal is formed as an electrode on the square nano-cavity and is configured to excite surface plasmons with the quantum well structure to generate light. Complementary metal oxide semiconductor (CMOS) devices are formed on the substrate.


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