The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2017

Filed:

Aug. 21, 2013
Applicants:

Juanita N. Kurtin, Hillsboro, OR (US);

Weiwen Zhao, Happy Valley, OR (US);

Inventors:

Juanita N. Kurtin, Hillsboro, OR (US);

Weiwen Zhao, Happy Valley, OR (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/00 (2006.01); H01L 33/50 (2010.01); C09K 11/02 (2006.01); C01B 19/00 (2006.01);
U.S. Cl.
CPC ...
H01L 33/502 (2013.01); C01B 19/007 (2013.01); C09K 11/025 (2013.01); C01P 2002/60 (2013.01); C01P 2002/84 (2013.01); C01P 2004/04 (2013.01); C01P 2004/64 (2013.01); H01L 33/501 (2013.01);
Abstract

Semiconductor nanocrystal structures having silica insulator coatings encapsulating the nanocrystals and methods of fabricating semiconductor nanocrystal structures having silica insulator coatings encapsulating the nanocrystals involve adding a silicon-containing silica precursor species to a solution of nanocrystals, subsequently forming a silica-based insulator layer on the nanocrystals from a reaction involving the silicon-containing silica precursor species, and adding additional amounts of the silicon-containing silica precursor species after initial formation of the silica-based insulator layer while continuing to form the silica-based insulator layer to finally encapsulate each of the nanocrystals.


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