The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2017
Filed:
Feb. 19, 2014
Applicant:
Lg Electronics Inc., Seoul, KR;
Inventors:
Assignee:
LG ELECTRONICS INC., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/16 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/02425 (2013.01); H01L 21/02444 (2013.01); H01L 21/02458 (2013.01); H01L 21/02494 (2013.01); H01L 21/02505 (2013.01); H01L 33/007 (2013.01); H01L 33/0075 (2013.01); H01L 33/0079 (2013.01); H01L 33/12 (2013.01); H01L 33/16 (2013.01);
Abstract
Disclosed is a method of manufacturing a light emitting device. More particularly, disclosed are a growth substrate, a nitride semiconductor device and a method of manufacturing a light emitting device. The method includes preparing a growth substrate including a metal substrate, forming a semiconductor structure including a nitride-based semiconductor on the growth substrate, providing a support structure on the semiconductor structure, and separating the growth substrate from the semiconductor structure.