The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2017
Filed:
Apr. 15, 2016
Samsung Electronics Co., Ltd., Suwon-si, KR;
Young Hwan Park, Yongin-si, KR;
Sam Mook Kang, Hwaseong-si, KR;
Jun Youn Kim, Hwaseong-si, KR;
Mi Hyun Kim, Seoul, KR;
Joo Sung Kim, Seongnam-si, KR;
Young Jo Tak, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of manufacturing a semiconductor substrate may include: forming a buffer layer on a growth substrate; forming a plurality of openings in the buffer layer, the plurality of openings penetrating through the buffer layer and being spaced apart from one another; forming a plurality of cavities on the growth substrate, the plurality of cavities being aligned to respectively correspond to the plurality of openings; growing a semiconductor layer on the buffer layer, the growing the semiconductor layer including filling the plurality of openings with the semiconductor layer; and separating the buffer layer and the semiconductor layer from the growth substrate, wherein a diameter of each of the plurality of openings at a boundary between the growth substrate and the buffer layer is smaller than a diameter of each of the plurality of cavities at the boundary.