The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2017
Filed:
Aug. 31, 2012
Applicants:
Gyuchul Yi, Seoul, KR;
Chulho Lee, Seoul, KR;
Inventors:
Gyuchul Yi, Seoul, KR;
Chulho Lee, Seoul, KR;
Assignee:
SNU R&DB FOUNDATION, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/263 (2006.01); H01L 29/161 (2006.01); H01L 29/201 (2006.01); H01L 29/24 (2006.01); H01L 29/778 (2006.01); H01L 29/165 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/225 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1606 (2013.01); H01L 21/0245 (2013.01); H01L 21/0254 (2013.01); H01L 21/0274 (2013.01); H01L 21/0277 (2013.01); H01L 21/02444 (2013.01); H01L 21/02458 (2013.01); H01L 21/02472 (2013.01); H01L 21/02483 (2013.01); H01L 21/02502 (2013.01); H01L 21/02513 (2013.01); H01L 21/02527 (2013.01); H01L 21/02532 (2013.01); H01L 21/02554 (2013.01); H01L 21/263 (2013.01); H01L 29/161 (2013.01); H01L 29/201 (2013.01); H01L 29/24 (2013.01); H01L 29/66015 (2013.01); H01L 29/66431 (2013.01); H01L 29/66462 (2013.01); H01L 29/66742 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 29/78603 (2013.01); H01L 29/78684 (2013.01); H01L 29/165 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/225 (2013.01);
Abstract
According to one embodiment of the present invention, an electronic device includes: a carbon layer including graphene, a thin film layer formed on the carbon layer, a channel layer formed on the thin film layer, a current cutoff layer formed between the thin film layer and the channel layer so as to cut off the flow of current between the thin film layer and the channel layer, and a source electrode and a drain electrode formed on the channel layer.