The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2017

Filed:

May. 15, 2015
Applicant:

Nxp B.v., Eindhoven, NL;

Inventors:

Peter Steeneken, Valkenswaard, NL;

Anco Heringa, Waalre, NL;

Radu Surdeanu, Leuven, BE;

Luc Van Dijk, Nijmegen, NL;

Hendrik Johannes Bergveld, Eindhoven, NL;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 7/537 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H02M 5/00 (2006.01); H02M 3/00 (2006.01); H03K 17/687 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 29/0649 (2013.01); H01L 29/41758 (2013.01); H01L 29/4238 (2013.01); H02M 3/00 (2013.01); H02M 5/00 (2013.01); H02M 7/537 (2013.01); H03K 17/687 (2013.01); H01L 29/42356 (2013.01);
Abstract

Aspects of the present disclosure are directed toward apparatuses, methods, and systems that include at least two regions of a first semiconductor material and at least two regions of second semiconductor material that are alternatively interleaved. Additionally, the apparatuses, methods, and systems include a first electrode and a second electrode that can operate both as a source and drain. The apparatuses, methods, and systems also include a first gate electrode having multiple portions on the first semiconductor material and a second gate electrode having multiple portions on the second semiconductor material that bidirectionally control current flow between the first electrode and the second electrode.


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