The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2017
Filed:
Aug. 04, 2016
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Kazuo Tomita, Tokyo, JP;
Takeshi Kawamura, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
Provided is a semiconductor integrated circuit device having pixel regions in a photodiode array region and having, in each of the pixel regions, a waveguide holding hole having a substantially perpendicular sidewall above the photodiode and embedded with a silicon oxide-based sidewall insulating film reaching the bottom surface of the hole and two or more silicon nitride-based insulating films having a higher refractive index on the inner side of the hole. This structure makes it possible to prevent deterioration of pixel characteristics of an imaging device, such as CMOS sensor, which is rapidly decreasing in size.