The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2017
Filed:
Aug. 04, 2014
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Stmicroelectronics SA, Montrouge, FR;
Centre National DE LA Recherche Scientifique, Paris, FR;
Yohann Solaro, Grenoble, FR;
Sorin Cristoloveanu, Seyssinet Pariset, FR;
Claire Fenouillet-Beranger, Voiron, FR;
Pascal Fonteneau, Theys, FR;
Commissariat à l'énergie atomique et aux énergies alternatives, Paris, FR;
STMicroelectronics SA, Mountrouge, FR;
Centre National De La Recherche Scientifique, Paris, FR;
Abstract
The invention relates to an IC with an electrostatic discharge protection device. There is a buried insulant layer 50 nm or less in thickness and first and second bipolar transistors on the insulant layer, one being an npn transistor and the other a pnp transistor. The base of the first transistor is merged with the collector of the second transistor and the base of the second transistor is merged with the collector of the first transistor. The first and second bipolar transistors are configured to selectively conduct a discharge current between two electrodes of the protection device. There is a first semiconductor ground plane under the insulant layer, being electrically biased, extending until it is plumb with the base of the first bipolar transistor, exhibiting a first type of doping identical to that of the base of the first bipolar transistor with a doping density at least ten times greater.