The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2017

Filed:

Oct. 16, 2015
Applicant:

Mediatek Inc., Hsin-Chu, TW;

Inventors:

Chien-Kai Huang, Zhubei, TW;

Yuan-Fu Chung, Changhua County, TW;

Bo-Shih Huang, Hsinchu, TW;

Chang-Tzu Wang, Taoyuan, TW;

Assignee:

MEDIATEK INC., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 27/0296 (2013.01); H01L 29/0619 (2013.01); H01L 29/0649 (2013.01); H01L 29/8611 (2013.01);
Abstract

An electrostatic discharge (ESD) protection device includes a semiconductor substrate and a pair of first well regions formed in the semiconductor substrate, wherein the pair of first well regions have a first conductivity type and are separated by at least one portion of the semiconductor substrate. In addition, the ESD protection device further includes a first doping region formed in a portion of the at least one portion of the semiconductor substrate separating the pair of first well regions, having a second conductivity type opposite to the first conductivity type. Moreover, the ESD protection device further includes a pair of second doping regions respectively formed in one of the first well regions, having the first conductivity type, and a pair of insulating layers respectively formed over a portion of the semiconductor substrate to cover a portion of the first doped region and one of the second doping regions.


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