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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9666518 B1

PDFFull Text
Date of Patent:
May. 30, 2017

Filed:

Jan. 31, 2017

Semiconductor device

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Katsuhiko Funatsu, Tokyo, JP;

Yukihiro Sato, Tokyo, JP;

Takamitsu Kanazawa, Tokyo, JP;

Masahiro Koido, Tokyo, JP;

Hiroyoshi Taya, Tokyo, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

Mattingly & Malur, PC

Primary Examiner:

Eduardo A Rodela

Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 25/07 (2006.01); H01L 23/053 (2006.01); H01L 23/10 (2006.01); H01L 23/00 (2006.01); H01L 21/52 (2006.01); H01L 21/54 (2006.01); H01L 23/16 (2006.01); H01L 29/417 (2006.01); H01L 23/04 (2006.01); H01L 23/02 (2006.01); H01L 23/057 (2006.01); H02S 40/32 (2014.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01L 21/52 (2013.01); H01L 21/54 (2013.01); H01L 23/02 (2013.01); H01L 23/04 (2013.01); H01L 23/053 (2013.01); H01L 23/057 (2013.01); H01L 23/10 (2013.01); H01L 23/16 (2013.01); H01L 23/498 (2013.01); H01L 23/49811 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 24/85 (2013.01); H01L 24/92 (2013.01); H01L 25/072 (2013.01); H01L 29/41708 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/45014 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/4813 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48101 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/92247 (2013.01); H01L 2924/13055 (2013.01); H02S 40/32 (2014.12);
Abstract

A semiconductor device includes a plurality of metal patterns formed on a ceramic substrate, and a semiconductor chip mounted on some of the plurality of metal patterns. Also, a plurality of hollow portions are formed in peripheral portions of the plurality of metal patterns. In addition, the plurality of hollow portions are not formed in a region overlapping the semiconductor chip in the plurality of metal patterns. Furthermore, the plurality of hollow portions are provided in a plurality of metal patterns arranged at a position closest to the peripheral portion of the top surface of the ceramic substrate among the plurality of metal patterns.

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