The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2017

Filed:

Jun. 22, 2016
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Tsung-Hsiung Lee, Taoyuan, TW;

Jui-Chun Chang, Hsinchu, TW;

Hsiung-Shih Chang, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 21/225 (2006.01); H01L 29/786 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823487 (2013.01); H01L 21/2253 (2013.01); H01L 21/76224 (2013.01); H01L 29/0615 (2013.01); H01L 29/0634 (2013.01); H01L 29/4236 (2013.01); H01L 29/66681 (2013.01); H01L 29/66734 (2013.01); H01L 29/7816 (2013.01); H01L 29/7824 (2013.01); H01L 29/78624 (2013.01); H01L 21/26586 (2013.01);
Abstract

A semiconductor device is disclosed. The device includes an epitaxial layer on a substrate, wherein the epitaxial layer includes first trenches and second trenches alternately arranged along a first direction. The epitaxial layer between the adjacent first and second trenches includes a first doping region and a second doping region, and the first doping region and the second doping region have different conductivity types. An interface is between the first doping region and the second doping region to form a super-junction structure. A gate structure is on the epitaxial layer. The epitaxial layer under the gate structure includes a channel extending along a second direction, and the first direction is perpendicular to the second direction.


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