The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2017
Filed:
Sep. 14, 2016
Infineon Technologies Ag, Neubiberg, DE;
Ravi Keshav Joshi, Villach, AT;
Romain Esteve, Villach, AT;
Markus Kahn, Rangersdorf, AT;
Kurt Pekoll, Villach, AT;
Juergen Steinbrenner, Noetsch, AT;
Gerald Unegg, Villach, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A silicon-carbide substrate that includes a doped contact region and a dielectric layer is provided. A protective layer is formed on the dielectric layer. A structured mask is formed on the protective layer. Sections of the protective layer and the dielectric layer that are exposed by openings in the mask are removed. The structured mask is removed. A metal layer is deposited such that a first portion of the metal layer directly contacts the doped contact region and a second portion of the metal layer lines the remaining sections of the protective layer and the dielectric layer. A first rapid thermal anneal process is performed. After performing the first rapid thermal anneal process, the second portion of the metal layer and the remaining section of the protective layer are removed without removing the first portion of the metal layer.