The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2017

Filed:

Oct. 08, 2015
Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

Inventor:

Yuichi Urano, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaka-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/283 (2006.01); H01L 23/36 (2006.01); H01L 21/683 (2006.01); H01L 23/433 (2006.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 23/051 (2006.01); H01L 21/304 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 21/283 (2013.01); H01L 21/304 (2013.01); H01L 21/6835 (2013.01); H01L 23/051 (2013.01); H01L 23/36 (2013.01); H01L 23/4334 (2013.01); H01L 23/49562 (2013.01); H01L 24/33 (2013.01); H01L 23/3107 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01);
Abstract

A method for manufacturing a semiconductor device including a semiconductor chip having a front surface electrode and a rear surface electrode provided on a front surface and a rear surface, respectively, the method includes a front surface electrode layer forming step of forming a front surface electrode layer as the front surface electrode on a front surface of a semiconductor wafer forming the semiconductor chip; a thinning step of grinding a rear surface of the semiconductor wafer to reduce a thickness of the semiconductor wafer after the front surface electrode layer forming step; a plating step of forming an electrode plating film as the front surface electrode on a surface of the front surface electrode layer after the thinning step; and a rear surface electrode forming step of forming the rear surface electrode on the ground rear surface of the semiconductor wafer after the plating step.


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