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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9666433 B1

PDFFull Text
Date of Patent:
May. 30, 2017

Filed:

Apr. 15, 2016

Methods for manufacturing a semiconductor device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Badro Im, Yongin-si, KR;

Yoonchul Cho, Suwon-si, KR;

Sangyeol Kang, Suwon-si, KR;

Daehyun Kim, Suwon-si, KR;

Dongkak Lee, Yongin-si, KR;

Jun-Noh Lee, Hwaseong-si, KR;

Bonghyun Kim, Incheon, KR;

Kongsoo Lee, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:

Volentine & Whitt, PLLC

Primary Examiner:

Thien F Tran

Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/3105 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/3086 (2013.01); H01L 21/3105 (2013.01); H01L 21/31058 (2013.01); H01L 21/31122 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 21/0228 (2013.01); H01L 21/02112 (2013.01); H01L 21/02129 (2013.01); H01L 21/02274 (2013.01); H01L 21/32055 (2013.01);
Abstract

Carbon-containing patterns are formed on an etch target layer, side surfaces of the carbon-containing patterns are treated by a hydrophilic process, poly-crystalline silicon spacers are formed on the side surfaces of the carbon-containing patterns after the hydrophilic process has been performed, and the etch target layer is patterned using the poly-crystalline silicon spacers as an etch mask.

Find Patent Forward Citations

Im, Badro. (2017). Methods for manufacturing a semiconductor device (U.S. Patent No. 9666433). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9666433

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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