The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2017

Filed:

Jan. 07, 2016
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Sibo Ma, Fujisawa, JP;

Masahiro Yoshihara, Yokohama, JP;

Katsumi Abe, Yokohama, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/28 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/28 (2013.01); G11C 16/0483 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01);
Abstract

A semiconductor memory device capable of improving a read characteristic of a sense amplifier and a stored data read method are provided. The semiconductor memory device includes a sense amplifier and a controller. The sense amplifier has a first transistor that clamps a voltage of a bit line, a second transistor that is provided between a voltage node clamped by the first transistor and a reference voltage node, and a third transistor that is inserted between a charge/discharge node and the voltage node clamped by the first transistor. In a first operation mode, the controller turns on the first transistor and the second transistor and turns off the third transistor. In the second operation mode, the third transistor is turned on and in the third operation mode, the first transistor is turned on, the second transistor is turned off, the third transistor is turned on, and the fourth transistor is turned on.


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