The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2017

Filed:

Dec. 04, 2015
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Byoung-Sung You, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G06F 3/06 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5642 (2013.01); G06F 3/061 (2013.01); G11C 16/107 (2013.01); G11C 11/5628 (2013.01); G11C 16/0483 (2013.01); G11C 16/3454 (2013.01);
Abstract

A nonvolatile memory device includes a multi-level cell which stores M-bit data at a time and M number of latches for respectively storing M-bit data on a single bit basis. A controller sequentially latches M-bit data of the multi-level cell into the M number of latches, respectively, during a first half read period, and sequentially outputs the latched M-bit data in the M number of latches during a second half read period.


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