The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2017
Filed:
Apr. 12, 2016
Qualcomm Incorporated, San Diego, CA (US);
Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;
Seong-Ook Jung, Seoul, KR;
Taehui Na, Seoul, KR;
Byung Kyu Song, Seoul, KR;
Jung Pill Kim, San Diego, CA (US);
Seung Hyuk Kang, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Industry-Academic Cooperation Foundation, Yonsei University, Seoul, KR;
Abstract
A method of sensing a data value stored at a memory cell according to a dual mode sensing scheme includes determining, at a sensing circuit, whether a resistance of a magnetic tunnel junction (MTJ) element is within a first range of resistance values, within a second range of resistance values, or within a third range of resistance values. The MTJ element is included in the memory cell. The method also includes determining the data value stored at the memory cell according to a first mode of operation if the resistance of the MTJ element is within the first range of resistance values or within the third range of resistance values. The method further includes determining the data value stored at the memory cell according to a second mode of operation if the resistance of the MTJ element is within the second range of resistance values.