The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2017
Filed:
May. 17, 2016
Applicant:
SK Hynix Inc., Icheon-si Gyeonggi-do, KR;
Inventors:
Chang Yong Ahn, Icheon-si, KR;
Ho Seok Em, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/06 (2006.01); G11C 7/10 (2006.01); G11C 7/22 (2006.01); G11C 7/12 (2006.01); G11C 13/00 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 7/062 (2013.01); G11C 7/1063 (2013.01); G11C 7/12 (2013.01); G11C 7/22 (2013.01); G11C 11/1675 (2013.01); G11C 11/1677 (2013.01); G11C 13/0064 (2013.01); G11C 13/0069 (2013.01); G11C 16/10 (2013.01); G11C 16/3459 (2013.01); G11C 2013/0042 (2013.01); G11C 2207/229 (2013.01);
Abstract
A semiconductor memory apparatus may include a write driver, a data sensing section, and a programming control section. The write driver may write an input data into a memory cell in response to a write signal. The data sensing section may generate a comparison flag signal by comparing an output data outputted from the memory cell with a reference voltage in response to a verification read signal. The programming control section may generate the write signal for an initial write operation and the verification read signal as soon as the comparison flag signal is enabled.