The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2017
Filed:
Mar. 27, 2015
Nlt Technologies, Ltd., Kanagawa, JP;
Kazushige Takechi, Kanagawa, JP;
Hiroshi Haga, Kanagawa, JP;
Shinnosuke Iwamatsu, Yamagata, JP;
Seiya Kobayashi, Yamagata, JP;
Yutaka Abe, Yamagata, JP;
Toru Yahagi, Yamagata, JP;
NLT TECHNOLOGIES, LTD., Kanagawa, JP;
Abstract
The ion sensors using TFT or MOSFET are low in the measurement sensitivity so that it is difficult to detect an extremely small amount of sensing-target substance. A TFT ion sensor includes both a gate electrode (a silicon substrate) and a reference electrode, in which the electrostatic capacitance of a gate insulating film (a thermal oxide film) is set to be larger than the electrostatic capacitance of an ion sensitive insulating film. Therefore, it is possible to detect the concentration of ions, hormones, and the like in a sensing-target substance from the shift in the threshold voltage of the gate-source voltage to source-drain current property.