The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Oct. 24, 2014
Applicant:

Formosa Epitaxy Incorporation, Taoyuan County, TW;

Inventors:

Chih-Shu Huang, Taoyuan County, TW;

Chun-Ju Tun, Taoyuan County, TW;

Shyi-Ming Pan, Taoyuan County, TW;

Wei-Kang Cheng, Taoyuan County, TW;

Keng-Ying Liao, Taoyuan County, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H05B 33/08 (2006.01); H05B 37/02 (2006.01); H01L 33/00 (2010.01); H01L 27/06 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H05B 33/0815 (2013.01); H01L 27/0629 (2013.01); H01L 27/15 (2013.01); H01L 29/872 (2013.01); H01L 33/0025 (2013.01); H05B 33/0824 (2013.01); H05B 37/02 (2013.01);
Abstract

A light emitting device including a light emitting component is provided, wherein said light emitting comprising an integrated light emitting diode and a semiconductor field effect transistor. The semiconductor field effect transistor may prevent situations such as overheating and voltage instability by controlling a current passing through the light emitting diode as well as enhancing the ability to withstand electrostatic discharge and reducing cost of the light emitting device in multiple aspects.


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