The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Jul. 05, 2016
Applicants:

Yong Sung Park, Suwon-si, KR;

Joonmyoung Lee, Anyang-si, KR;

Ki Woong Kim, Hwaseong-si, KR;

Juhyun Kim, Hwaseong-si, KR;

Sechung OH, Yongin-si, KR;

Inventors:

Yong Sung Park, Suwon-si, KR;

Joonmyoung Lee, Anyang-si, KR;

Ki Woong Kim, Hwaseong-si, KR;

Juhyun Kim, Hwaseong-si, KR;

Sechung Oh, Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 43/08 (2013.01);
Abstract

A method of forming a layer includes providing a first insulator and a second insulator over a lower structure, generating a first ion source and a second ion source from the first insulator and the second insulator, respectively, and forming an insulating layer on the lower structure using the first ion source and the second ion source. The first and second insulators are vertically spaced apart from the lower structure and are laterally spaced apart from each other. The first insulator and the second insulator include the same material.


Find Patent Forward Citations

Loading…