The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Aug. 21, 2015
Applicant:

Advanced Optoelectronic Technology, Inc., Hsinchu Hsien, TW;

Inventors:

Chao-Hsiung Chang, Hsinchu, TW;

Hou-Te Lin, Hsinchu, TW;

Pin-Chuan Chen, Hsinchu, TW;

Lung-Hsin Chen, Hsinchu, TW;

Wen-Liang Tseng, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01L 33/48 (2010.01);
U.S. Cl.
CPC ...
H01L 33/382 (2013.01); H01L 33/387 (2013.01); H01L 33/44 (2013.01); H01L 33/486 (2013.01); H01L 2933/0016 (2013.01);
Abstract

The present disclosure provides a light emitting diode die which includes a substrate; an N type semiconductor layer, an active layer, and a P type semiconductor layer formed on the substrate in sequence; at least one recess, and a pair of electrodes. The recess extends to the N type semiconductor layer. The insulating layer covers the all of side surfaces of the N type semiconductor layer, the active layer, the P type semiconductor layer, and covers top of the P type semiconductor layer except an opening on the P semiconductor layer. One of the electrodes is filled in the recess and electrically connected to the N type semiconductor layer, and the other one of the electrodes is connected to the P type semiconductor layer in the opening. The present disclosure further provides an LED package having the LED die and a method for manufacturing the same.


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