The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
May. 28, 2014
Asahi Kasei E-materials Corporation, Tokyo, JP;
Jun Koike, Tokyo, JP;
ASAHI KASEI E-MATERIALS CORPORATION, Tokyo, JP;
Abstract
A pattern wafer () for LEDs is provided with an uneven structure A () having an arrangement with n-fold symmetry substantially on at least a part of the main surface, where in at least a part of the uneven structure A (), a rotation shift angle Θ meets 0°<Θ≦(180/n)° in which Θ is the rotation shift angle of an arrangement axis A of the uneven structure A () with respect to a crystal axis direction in the main surface, and a top of the convex-portion of the uneven structure A () is a corner portion with a radius of curvature exceeding '0'. A first semiconductor layer (), light emitting semiconductor layer () and second semiconductor layer () are layered on the uneven structure A () to constitute an epitaxial wafer () for LEDs. It is possible to provide the pattern wafer for LEDs and epitaxial wafer for LEDs with cracks and internal quantum efficiency IQE improved.