The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Apr. 08, 2016
Applicant:

Palo Alto Research Center Incorporated, Palo Alto, CA (US);

Inventors:

John E. Northrup, Palo Alto, CA (US);

Thomas Wunderer, Palo Alto, CA (US);

Jeng Ping Lu, Fremont, CA (US);

Noble M Johnson, Menlo Park, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 21/338 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0025 (2013.01); H01L 33/0016 (2013.01);
Abstract

A polarization controlled device has a first layer comprising a group III-nitride semiconductor substrate or template; a second group III-nitride semiconductor layer disposed over the group III-nitride semiconductor substrate or template; a third group III-nitride semiconductor layer disposed over the second group III-nitride semiconductor layer; and a fourth group III-nitride semiconductor layer disposed over the third group III-nitride semiconductor layer. A pn junction is formed at an interface between the third and fourth group III-nitride semiconductor layers. A polarization heterojunction is formed between the second group III-nitride semiconductor layer and the third group III-nitride semiconductor layer. The polarization junction has fixed charges of a polarity on one side of the polarization junction and fixed charges of an opposite polarity on an opposite side of the polarization junction. When unbiased, the pn junction comprises a first electric field that opposes the flow of carriers across the pn junction and the polarization junction comprises a second electric field that opposes the flow of oppositely charged carriers across the polarization junction.


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