The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Nov. 19, 2014
Institutt for Energiteknikk, Kjeller, NO;
Junjie Zhu, Oslo, NO;
Su Zhou, Beijing, CN;
Halvard Haug, Oslo, NO;
Erik Stensrud Marstein, Skedsmokorset, NO;
Sean Erik Foss, Skedsmokorset, NO;
Wenjing Wang, Beijing West Disctrict, CN;
Chunlan Zhou, Beijing, CN;
INSTITUTT FOR ENERGITEKNIKK, Kjeller, NO;
Abstract
A method for manufacturing a passivation stack on a crystalline silicon solar cell device. The method includes providing a substrate comprising a crystalline silicone layer such as a crystalline silicon wafer or chip, cleaning a surface of the crystalline silicon layer by removing an oxide layer at least from a portion of one side of the crystalline silicon layer, depositing, on at least a part of the cleaned surface, a layer of silicon oxynitride, and depositing a capping layer comprising a hydrogenated dielectric material on top of the layer of silicon oxynitride, wherein the layer of silicon oxynitride is deposited at a temperature from 100° C. to 200° C., and the step of depositing the layer of silicon oxynitride includes using NO and SiHas precursor gasses in an Nambient atmosphere and depositing silicon oxynitride with a gas flow ratio of NO to SiHbelow 2.