The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Jun. 26, 2014
Applicant:
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Inventor:
Eun-Hyun Kim, Suwon-si, KR;
Assignee:
SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 29/66969 (2013.01); H01L 29/78606 (2013.01); H01L 29/78696 (2013.01);
Abstract
A thin film transistor includes a gate electrode on a substrate, a gate insulating layer on the gate electrode, a semiconductor layer on the gate insulating layer, the semiconductor layer overlapping at least a portion of the gate electrode, a plurality of etch stoppers on the semiconductor layer, and a source electrode and a drain electrode spaced apart from each other and disposed on the etch stoppers and the semiconductor layer, wherein a plurality of channel regions are defined in the semiconductor layer by the etch stoppers on the semiconductor layer.