The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Aug. 06, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventors:
Eok-su Kim, Seongnam-si, KR;
Myung-kwan Ryu, Yongin-si, KR;
Kyoung-seok Son, Seoul, KR;
Sung-hee Lee, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); G02F 1/133 (2006.01); G02F 1/1368 (2006.01); H01L 27/12 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); G09G 3/36 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78648 (2013.01); G02F 1/1368 (2013.01); G09G 3/3648 (2013.01); H01L 29/4908 (2013.01); H01L 29/78645 (2013.01); G02F 2001/13685 (2013.01); G09G 2300/0426 (2013.01);
Abstract
A thin film transistor (TFT) and a method of driving the same are disclosed. The TFT includes: an active layer; a bottom gate electrode disposed below the active layer to drive a first region of the active layer; and a top gate electrode disposed on the active layer to drive a second region of the active layer. The TFT controls the conductivity of the active layer by using the bottom gate electrode and the top gate electrode.