The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Nov. 18, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Toshihiko Iinuma, Yokkaichi, JP;

Yasunori Oshima, Yokkaichi, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 29/7843 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 27/11582 (2013.01);
Abstract

A semiconductor memory device according to an embodiment includes a substrate, a plurality of conductive members containing a metal and provided on the substrate, a stacked body provided in each region between the conductive members, a semiconductor pillar piercing the stacked body, a memory film and internal stress films. The plurality of conductive members extend in a first direction and are separated from each other in a second direction. The internal stress films also extend in the first direction and are separated from each other in the second direction. The first direction and the second direction are parallel to an upper surface of the substrate and intersect each other. The internal stress films contain material having internal stress having the reverse polarity of internal stress of the metal.


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