The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Jan. 20, 2016
Renesas Electronics Corporation, Tokyo, JP;
Sadayuki Ohnishi, Hitachinaka, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A p-type well is formed in a semiconductor substrate, and an n-type semiconductor region and a p-type semiconductor region are formed in the p-type well to be spaced apart from each other. The n-type semiconductor region is an emitter semiconductor region of a bipolar transistor, and the p-type well and the p-type semiconductor region are base semiconductor regions of the bipolar transistor. An electrode is formed on an element isolation region between the n-type semiconductor region and the p-type semiconductor region, and at least a part of the electrode is buried in a trench which is formed in the element isolation region. The electrode is electrically connected to the n-type semiconductor region.