The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Jun. 25, 2014
AU Optronics Corporation, Hsinchu, TW;
Chih-Pang Chang, Taipei, TW;
Tzu-Yin Kuo, Nantou County, TW;
Au Optronics Corporation, Hsinchu, TW;
Abstract
A thin film transistor and a fabricating method thereof are provided. The thin film transistor includes a semiconductor stacked layer, an insulating layer, a gate, a dielectric layer, a source and a drain. The semiconductor stacked layer includes a first metal oxide semiconductor layer and a second metal oxide semiconductor layer disposed on the first metal oxide semiconductor layer. A resistance value of the first metal oxide semiconductor layer is less than a resistance value of the second metal oxide semiconductor layer. The insulating layer is disposed on the semiconductor stacked layer. The gate is disposed on the insulating layer. The dielectric layer covers the gate, wherein the dielectric layer has a plurality of contact openings. The source and the drain are disposed on the dielectric layer, and filled into the contact openings to electrically connect with the semiconductor stacked layer.