The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Mar. 03, 2015
Sensor Electronic Technology, Inc., Columbia, SC (US);
Mikhail Gaevski, West Columbia, SC (US);
Grigory Simin, Columbia, SC (US);
Maxim S. Shatalov, Columbia, SC (US);
Alexander Dobrinsky, Loudonville, NY (US);
Michael Shur, Latham, NY (US);
Remigijus Gaska, Columbia, SC (US);
Sensor Electronic Technology, Inc., Columbia, SC (US);
Abstract
A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.