The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Jul. 12, 2016
Applicant:
Sensor Electronic Technology, Inc., Columbia, SC (US);
Inventors:
Grigory Simin, Columbia, SC (US);
Mikhail Gaevski, West Columbia, SC (US);
Michael Shur, Latham, NY (US);
Assignee:
Sensor Electronic Technology, Inc., Columbia, SC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 27/12 (2006.01); H01L 29/20 (2006.01); H01L 29/861 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/423 (2006.01); H01L 29/872 (2006.01); H01L 29/93 (2006.01); H01L 29/10 (2006.01); H01L 23/367 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 29/1087 (2013.01); H01L 29/404 (2013.01); H01L 29/4232 (2013.01); H01L 29/6609 (2013.01); H01L 29/66446 (2013.01); H01L 29/66477 (2013.01); H01L 29/7786 (2013.01); H01L 29/78 (2013.01); H01L 29/7838 (2013.01); H01L 29/861 (2013.01); H01L 29/8613 (2013.01); H01L 29/872 (2013.01); H01L 29/93 (2013.01); H01L 23/367 (2013.01); H01L 29/0623 (2013.01); H01L 29/0657 (2013.01); H01L 29/402 (2013.01); H01L 29/405 (2013.01); H01L 29/41758 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01); H01L 29/7831 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A lateral semiconductor device and/or design including a space-charge generating layer and an electrode or a set of electrodes located on an opposite side of a device channel as contacts to the device channel is provided. The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel.