The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Dec. 17, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Yong-Ho Yoo, Yongin-si, KR;
Tae-jung Park, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/404 (2006.01); H01L 29/06 (2006.01); G11C 11/4091 (2006.01); H01L 27/108 (2006.01); H01L 49/02 (2006.01); G11C 11/405 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); G11C 11/405 (2013.01); G11C 11/4091 (2013.01); G11C 11/565 (2013.01); H01L 27/108 (2013.01); H01L 27/10844 (2013.01); H01L 28/90 (2013.01);
Abstract
A semiconductor device includes a first memory cell including a first transistor and a first capacitor, the first transistor comprising a first gate electrode, a first source, and a first drain; a second memory cell including a second transistor and the first capacitor, the second transistor comprising a second gate electrode, a second source, and a second drain; a first word line coupled to the first gate electrode; and a second word line coupled to the second gate electrode. The first capacitor is electrically connected between the first and second transistors.