The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Dec. 04, 2015
SK Hynix Inc., Gyeonggi-do, KR;
Nam Kyun Park, Gyeonggi-do, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
A 3-dimensional stack memory device includes a semiconductor substrate, a stacked active pattern configured so that a plurality of stripe shape active regions and insulation layers are stacked alternatively over the semiconductor substrate, a gate electrode formed in the stacked active pattern, a source and drain formed at both sides of the gate electrode in each of the plurality of active regions, a bit line formed on one side of the drain to be connected to the drain, a resistive device layer formed on one side of the source to be connected to the source, and a source line connected to the resistive device layer. The source is configured of an impurity region having a first conductivity type, and the drain is configured of an impurity region having a second conductivity type different from the first conductivity type.