The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Apr. 19, 2016
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Chun-Yung Ai, Taipei, TW;

Chia-Ying Liu, Hsinchu, TW;

Wu-Zang Yang, Shi-Hu Town, TW;

Assignee:

OmniVision Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 21/76237 (2013.01); H01L 27/14645 (2013.01); H01L 27/14689 (2013.01);
Abstract

An image sensor pixel includes a photodiode disposed in a semiconductor material, and doped regions surrounding the photodiode, at least in part. The doped regions include a doped portion of the semiconductor material. Deep trench isolation structures are disposed in the doped regions, and surround the photodiode at least in part. The deep trench isolation structures include a SiGe layer disposed on side walls of the deep trench isolation structures, a high-k dielectric disposed on the SiGe layer, and a filler material.


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