The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Oct. 26, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jae-Duk Lee, Seongnam-si, KR;
Young-Woo Park, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 27/11582 (2017.01); H01L 27/11573 (2017.01); H01L 27/11568 (2017.01); H01L 27/11565 (2017.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/02636 (2013.01); H01L 21/28282 (2013.01); H01L 21/76895 (2013.01); H01L 23/528 (2013.01); H01L 27/11565 (2013.01); H01L 27/11568 (2013.01); H01L 27/11573 (2013.01);
Abstract
A semiconductor device includes a lower insulation layer, a plurality of base layer patterns separated from each other on the lower insulation layer, a separation layer pattern between the base layer patterns, a plurality of channels extending in a vertical direction with respect to top surfaces of the base layer patterns, and a plurality of gate lines surrounding outer sidewalls of the channels, being stacked in the vertical direction and spaced apart from each other.