The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Dec. 16, 2015
Applicant:

Abb Schweiz Ag, Baden, CH;

Inventors:

Friedhelm Bauer, Semione, CH;

Andrei Mihaila, Baden, CH;

Assignee:

ABB Schweiz AG, Baden, CH;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 27/08 (2006.01); H01L 29/36 (2006.01); H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0814 (2013.01); H01L 29/0619 (2013.01); H01L 29/0688 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01); H01L 29/872 (2013.01); H01L 29/0649 (2013.01); H01L 29/1608 (2013.01); H01L 29/6606 (2013.01);
Abstract

A junction barrier Schottky rectifier with first and second drift layer sections, wherein a peak net doping concentration of the first section is at least two times lower than a minimum net doping concentration of the second section. For each emitter region the first section includes a layer which is in contact with the respective emitter region to form a pn-junction between the first section and the respective emitter region, wherein the thickness of this layer in a direction perpendicular to the interface between the first section and the respective emitter region is at least 0.1 μm. The JBS rectifier has a transition from unipolar to bipolar conduction mode at a lower forward bias due to lowering of electrostatic forces otherwise impairing the transport of electrons toward the emitter regions under forward bias conditions, and with reduced snap-back phenomenon.


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