The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Jul. 08, 2016
Sandisk Technologies Llc, Plano, TX (US);
Toru Ishigaki, Ofuna, JP;
SANDISK TECHNOLOGIES LLC, Plano, TX (US);
Abstract
Dielectric pedestal structures embedded in a sacrificial material layer is formed between a substrate and an alternating stack of insulating layers and spacer material layers. After memory openings are formed through the alternating layer, a cavity is formed by removal of the sacrificial material layer selective to the dielectric pedestal structures. A memory film, a semiconductor channel layer, and a dielectric core are sequentially formed in the volume including the cavity and the memory openings. A backside trench is formed through the alternating stack in an area that straddles the dielectric pedestal structures. By recessing the dielectric pedestal structures selective to the semiconductor channel layer, planar regions and vertical regions of the semiconductor channel layer can be physically exposed, which are converted into source regions. Contact resistance can be lowered due the increased contact area provided by vertical source portions.