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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9659816 B1

PDFFull Text
Expired
Date of Patent:
May. 23, 2017

Filed:

Mar. 09, 2016

Pattern forming method

Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Atsushi Hieno, Yokohama, JP;

Koji Asakawa, Kawasaki, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Amanda C Walke

Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/40 (2006.01); H01L 21/768 (2006.01); G03F 7/20 (2006.01); G03F 7/00 (2006.01); H01L 21/027 (2006.01); G03F 7/16 (2006.01); H01L 21/311 (2006.01); B81C 1/00 (2006.01); B82Y 40/00 (2011.01); B82Y 30/00 (2011.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); B81C 1/00031 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); G03F 7/002 (2013.01); G03F 7/0035 (2013.01); G03F 7/165 (2013.01); G03F 7/20 (2013.01); H01L 21/0271 (2013.01); H01L 21/0275 (2013.01); H01L 21/02118 (2013.01); H01L 21/0337 (2013.01); H01L 21/30604 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/76816 (2013.01); B81C 2201/0149 (2013.01);
Abstract

A pattern forming method in an embodiment includes forming, on or above a substrate, a block copolymer layer containing a first polymer and a second polymer having lower surface energy than the first polymer, heat treating the block copolymer layer to separate the block copolymer layer into a first phase containing the first polymer and a second phase containing the second polymer, and using an atomic layer deposition process, selectively forming a metal layer on the first phase and selectively removing the second phase.

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Hieno, Atsushi. (2017). Pattern forming method (U.S. Patent No. 9659816). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9659816

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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