The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

May. 11, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventor:

Seok-han Park, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/033 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/0337 (2013.01); H01L 21/32139 (2013.01); H01L 27/10852 (2013.01); H01L 21/02118 (2013.01); H01L 21/31133 (2013.01); H01L 27/10894 (2013.01);
Abstract

A method of forming a pattern, the method including forming a mask layer on a feature layer on a substrate; forming guides regularly arranged with a first pitch on the mask layer in a first region and dummy guides regularly arranged with the first pitch on the mask layer in a second region spaced apart from the first region with a separation region therebetween, the separation region having a width greater than the first pitch; forming a block copolymer layer on the mask layer; phase-separating the block copolymer layer to form a self-assembled layer; forming a mask pattern by etching the mask layer using the self-assembled layer; and patterning the feature layer by transferring a shape of the mask pattern to the feature layer in the first region while blocking the shape of the mask pattern from being transferred to the feature layer in the second region.


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