The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Mar. 06, 2014
Applicant:
Zeon Corporation, Tokyo, JP;
Inventor:
Tatsuya Sugimoto, Tokyo, JP;
Assignee:
ZEON CORPORATION, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 21/3213 (2006.01); C09K 13/00 (2006.01); C09K 13/08 (2006.01); C07C 19/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); C07C 19/08 (2013.01); C09K 13/00 (2013.01); C09K 13/08 (2013.01); H01L 21/3065 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01);
Abstract
The present invention is a high-purity 2-fluorobutane having a purity of 99.9 vol % or more and a butene content of 1,000 ppm by volume or less, and a method for using the high-purity 2-fluorobutane as a dry etching gas. According to the present invention, a high-purity 2-fluorobutane that is suitable as a plasma reaction gas for semiconductors is provided.