The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Jul. 22, 2015
Applicant:

Peter Wung Lee, Saratoga, CA (US);

Inventor:

Peter Wung Lee, Saratoga, CA (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 11/56 (2006.01); G11C 16/08 (2006.01); G11C 16/14 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 7/14 (2006.01); G11C 7/18 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5635 (2013.01); G11C 7/14 (2013.01); G11C 7/18 (2013.01); G11C 11/56 (2013.01); G11C 11/5642 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/14 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); G11C 16/3445 (2013.01); G11C 16/3459 (2013.01); G11C 29/50 (2013.01); G11C 2029/5002 (2013.01);
Abstract

A YUKAI NAND array comprising multiple strings associated with hierarchical global/local bit lines (GBL/LBL) and each string being associated with one LBL and having adjacent LBL as a dedicated local source line (LSL) without a common source line to connect all strings. Each of the LBLs is interleavingly associated with either an Odd or Even string selected via one pair of dummy cells inserted in each string and is used as one on-chip PCACHE register with full BL-shielding without wasting extra silicon area to allow batch-based multiple concurrent MLC All-BL, All-Vtn-Program and Alternative-WL program, Odd/Even read and verify operations with options of providing individual and common V-based Vt-compensation and Vcompensations to mitigate high WL-WL and BL-BL coupling effects. Bias conditions in each string are provided to correctly sense highly-negative erase-verify voltage, multiple negative program-verify voltages and without Vpunch-through, breakdown and body-effect in both boundary and non-boundary WLs cells.


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