The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Aug. 20, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Mark A. DiRocco, South Burlington, VT (US);

Kirk D. Peterson, Jericho, VT (US);

Norman W. Robson, Hopewell Junction, NY (US);

Keith C. Stevens, Fairfield, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 23/48 (2006.01); G01R 17/00 (2006.01); G01R 19/00 (2006.01); H01L 21/66 (2006.01); H01L 21/768 (2006.01); G01R 31/28 (2006.01); G01R 31/26 (2014.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
G01R 17/00 (2013.01); G01R 19/00 (2013.01); G01R 31/2853 (2013.01); H01L 21/76898 (2013.01); H01L 22/14 (2013.01); H01L 22/34 (2013.01); H01L 23/481 (2013.01); H01L 28/10 (2013.01); H01L 28/40 (2013.01); G01R 31/2648 (2013.01); H01L 23/5227 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06596 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19104 (2013.01);
Abstract

According to a method herein, a multi-level inductor is created around a through-silicon-via (TSV) in a semiconductor substrate. A voltage induced in the multi-level inductor by current flowing in the TSV is sensed, using a computerized device. The voltage is compared to a reference voltage, using the computerized device. An electrical signature of the TSV is determined based on the comparing the voltage to the reference voltage, using the computerized device.


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