The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2017

Filed:

Mar. 22, 2013
Applicant:

Nittan Valve Co., Ltd., Kanagawa, JP;

Inventors:

Yukio Kubota, Kanagawa, JP;

Shinichi Ishii, Kanagawa, JP;

Assignee:

NITTAN VALVE CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/26 (2006.01); C23C 14/06 (2006.01); C23C 16/02 (2006.01); C23C 14/02 (2006.01); F01L 3/04 (2006.01);
U.S. Cl.
CPC ...
C23C 14/0611 (2013.01); C23C 14/024 (2013.01); C23C 14/025 (2013.01); C23C 16/0272 (2013.01); C23C 16/0281 (2013.01); C23C 16/26 (2013.01); F01L 3/04 (2013.01);
Abstract

The present invention provides a DLC (diamond like carbon) film coating and a coated valve lifter, wherein the DLC film coating can be formed at a film forming rate comparable with that achieved in the case of forming the DLC coating film by the CVD (chemical vapor deposition) method and has good durability comparable with that obtained in the case of forming the DLC film coating by the sputtering film forming method. The DLC film coating includes an intermediate layerdeposited on the surface of a base substrate and a DLC layerdeposited on the intermediate layer. The intermediate layeris formed of metal carbide or metal capable of forming a hard surface and the DLC layeris formed by adding a common metal element to that contained in the intermediate layerthereto while inert gas containing hydrocarbon gas is being introduced. As a result, the intermediate layerand the DLC layercan be formed by sequential sputtering processing and in addition, an H (hydrogen) content contained in the DLC layercan be adjusted by forming a Me-DLC (metal addition DLC) layer as a DLC layer


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